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| IRFM1310ST MECHANICAL DATA Dimensions in mm (inches) 2 6 .4 2 (1 .0 4 0 ) 2 0 .0 7 (0 .7 9 0 ) 1 3 .7 2 (0 .5 4 0 ) N-CHANNEL POWER MOSFET VDSS ID(cont) RDS(on) 100V 34A W 0.070W 1 3 .7 2 (0 .5 4 0 ) 1 2 .7 (0 .5 0 0 ) m in . 6 .3 5 (0 .2 5 0 ) 1 .0 2 (0 .0 4 0 ) 3 .8 1 (0 .1 5 0 ) 2 p lc s . 6 .6 0 (0 .2 6 0 ) FEATURES * REPETITIVE AVALANCHE RATING * ISOLATED AND HERMETICALLY SEALED * EASE OF PARALLELING * SIMPLE DRIVE REQUIREMENTS Pin 3 - Gate Pin 1 - Drain 3 .8 1 (0 .1 5 0 ) TO-254Z - Package Pin 2 - Source ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VGS ID ID IDM PD TJ , Tstg RqJC RqJCS RqJCA Gate - Source Voltage Continuous Drain Current (VGS = 10V , Tcase = 25C) Continuous Drain Current (VGS = 10V , Tcase = 100C) Pulsed Drain Current 1 Power Dissipation @ Tcase = 25C Linear Derating Factor Operating and Storage Temperature Range Thermal Resistance Junction to Case Thermal Resistance Case to Sink(Typical) Thermal Resistance Junction-to-Ambient 20V 34A 21A 136A 150W 1.2W/C -55 to 150C 0.83C/W 0.21C/W 48C/W Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) @ VDD = 25V , L 200mH , RG = 25W , Peak IL = 34A , Starting TJ = 25C 3) @ ISD 34A , di/dt 70A/ms , VDD BVDSS , TJ 150C , Suggested RG = 2.35W Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 02/00 IRFM1310ST ELECTRICAL CHARACTERISTICS (Tamb = 25C unless otherwise stated) Parameter BVDSS STATIC ELECTRICAL RATINGS Drain - Source Breakdown Voltage Test Conditions VGS = 0 ID = 1mA VGS = 10V VDS = VGS VDS 15V VGS = 0 VGS = 20V VGS = -20V VGS = 0 VDS = 25V f = 1MHz VGS = 10V VDS = 80V ID = 34A VDS = 80V VDD = 50V ID = 22A RG = 3.6W ID = 22A ID = 21A ID = 250mA IDS = 21A VDS = 0.8BVDSS TJ = 125C ID = 250mA Min. 100 Typ. Max. Unit V DBVDSS Temperature Coefficient of DTJ Breakdown Voltage RDS(on) Static Drain - Source On-State Resistance Forward Transconductance Zero Gate Voltage Drain Current Forward Gate - Source Leakage Reverse Gate - Source Leakage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Drain to Case Capacitance Total Gate Charge Gate - Source Charge Gate - Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Reference to 25C 0.13 0.060 2 11 25 250 100 -100 1900 450 230 110 15 58 11 56 45 40 34 136 4 V / C W V S(W )W( VGS(th) Gate Threshold Voltage gfs IDSS IGSS IGSS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf IS ISM VSD trr Qrr ton mA nA pF nC ns Fall Time - DRAIN DIODE CHARACTERISTICS SOURCE Continuous Source Current Pulse Source Current 2 A V ns Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time IS = 22A VGS = 0 IF = 22A TJ = 25C TJ = 25C 180 1.2 Negligible 1.6 270 1.8 di / dt 100A/ms VDD 50V mC Notes 1) Pulse Test: Pulse Width 300ms, d 2% 2) Repetitive Rating - Pulse width limited by maximum junction temperature. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk 02/00 |
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